Memory Design Engineer

Job Description:

JD for Memory Design Engineer

• Contribute/Lead towards Design and Development of Single/Multiport SRAM, Register file compilers in 28nm/16FF/7FF/5FF Technologies
• Circuit design/simulation of key components such as bitcell, WL decoder, SAMP, Column decoder and control logic.
• Development of critical path and characterization flow to perform detailed margin and characterization simulations.
• Statistical Analysis of Bit-Cell and Sense Amplifier and Self Time Blocks for Compiler Target yield Sign-Off
• Design Tuning, Margin Analysis and Sign-Off for Complete Compiler to meet Yield and Performance targets.
• Logic simulations and detailed timing analysis of key paths in high speed memory design.
• Signal-Integrity (EM) and Power-Integrity (IR drop) analysis and design.

Skill Sets/Prerequisites

• Expertise of high speed/low power CMOS circuit design, clocking scheme, Static and dynamic logic circuits
• Experience in Designing and driving one or many Memory Compilers Specifications to final release
• Deep expertise in Understanding and Developing Split rail, Power gating Architecture and circuit design
• Hands on Experience on Silicon Debug/Diagnose the failures. Deep expertise on Silicon Failures, Analysis and fixing.

5 Complete hands on experience in using Cadence/Mentor schematic/layout editor tools

• Complete hands on experience with Circuit simulation, MC analysis and waveform viewer tools such as HSPICE, HSIM, XA, FinSim, XARA, nWave, waveform viewer etc
• Experience in Skill/Perl/Python Scripting is a strong plus
• Experience in Understanding the layout design issues in sub nanometer regime is a must.
• Expertise in Understanding Memory DFT is a Plus.
• Masters Degree with 2+ Years or Bachelors Degree with 3+ years

R027064